Technical parameters/polarity: NPN
Technical parameters/dissipated power: 300 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 200mA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/gain bandwidth: 250 MHz
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92
External dimensions/height: 3.2 mm
External dimensions/packaging: TO-92
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/ECCN code: EAR99
Customs information/HTS code: 85412100959
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DTC143EET1G
|
ON Semiconductor | 功能相似 | SC-75-3 |
ON SEMICONDUCTOR DTC143EET1G 晶体管 双极预偏置/数字, 50 V, 100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率, SC-75 新
|
||
PDTC143EE,115
|
Nexperia | 功能相似 | SOT-416 |
NXP PDTC143EE,115 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率, SOT-416
|
||
PDTC143EE,115
|
NXP | 功能相似 | SOT-416-3 |
NXP PDTC143EE,115 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率, SOT-416
|
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