Technical parameters/drain source resistance: 15.0 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.3 W
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/rise time: 13.5 ns
Technical parameters/descent time: 13.5 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TSSOP-8
External dimensions/packaging: TSSOP-8
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI6415DQ
|
Vishay Siliconix | 功能相似 | TSSOP |
30V P沟道PowerTrench MOSFET 30V P-Channel PowerTrench MOSFET
|
||
SI6415DQ
|
Fairchild | 功能相似 | TSSOP-8 |
30V P沟道PowerTrench MOSFET 30V P-Channel PowerTrench MOSFET
|
||
SI6415DQ-T1
|
Vishay Siliconix | 功能相似 | TSSOP |
Small Signal Field-Effect Transistor, 6.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8
|
||
|
|
Vishay Intertechnology | 功能相似 |
MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.015Ω; ID +/-6.5A; TSSOP-8; PD 1.5W; VGS +/-
|
|||
SI6415DQ-T1-E3
|
Vishay Siliconix | 功能相似 | TSSOP-8 |
MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.015Ω; ID +/-6.5A; TSSOP-8; PD 1.5W; VGS +/-
|
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