Technical parameters/drain source resistance: 19.0 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.50 W
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): -6.50 A to 6.50 A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TSSOP
External dimensions/packaging: TSSOP
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI6415DQ
|
Vishay Siliconix | 功能相似 | TSSOP |
30V P沟道PowerTrench MOSFET 30V P-Channel PowerTrench MOSFET
|
||
SI6415DQ
|
Fairchild | 功能相似 | TSSOP-8 |
30V P沟道PowerTrench MOSFET 30V P-Channel PowerTrench MOSFET
|
||
|
|
Vishay Intertechnology | 功能相似 |
MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.015Ω; ID +/-6.5A; TSSOP-8; PD 1.5W; VGS +/-
|
|||
SI6415DQ-T1-E3
|
Vishay Siliconix | 功能相似 | TSSOP-8 |
MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.015Ω; ID +/-6.5A; TSSOP-8; PD 1.5W; VGS +/-
|
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