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Model SI4936ADY
Description Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Product QR code
Brand: Vishay Siliconix
Packaging SO
Delivery time
Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9660) Minimum order quantity(1)
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Technical parameters/drain source resistance: 36.0 mΩ

Technical parameters/polarity: N-Channel, Dual N-Channel

Technical parameters/dissipated power: 1.10 W

Technical parameters/leakage source breakdown voltage: 30.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 5.90 A

Technical parameters/rise time: 14.0 ns

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SO

External dimensions/packaging: SO

Other/Product Lifecycle: Unknown

Compliant with standards/RoHS standards: Non-Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4936ADY-E3 SI4936ADY-E3 Vishay Siliconix 功能相似 SO-8
MOSFET 30V 5.9A 2W
PDF
SI4936ADY-T1-E3 SI4936ADY-T1-E3 Vishay Semiconductor 功能相似 SOP-8
MOSFET, Power; Dual N-Ch; VDSS 30V; RDS(ON) 0.032Ω; ID 4.4A; SO-8; PD 1.1W; VGS +/-20
PDF
SI4936ADY-T1-E3 SI4936ADY-T1-E3 Vishay Intertechnology 功能相似 SO-8
MOSFET, Power; Dual N-Ch; VDSS 30V; RDS(ON) 0.032Ω; ID 4.4A; SO-8; PD 1.1W; VGS +/-20
PDF
SI4936ADY-T1-GE3 SI4936ADY-T1-GE3 Vishay Semiconductor 类似代替
Trans MOSFET N-CH 30V 4.4A 8Pin SOIC N T/R
PDF

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