Technical parameters/drain source resistance: 0.053 Ω
Technical parameters/polarity: Dual N-Channel
Technical parameters/dissipated power: 1.1 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 5.90 A
Technical parameters/rise time: 14 ns
Technical parameters/descent time: 5 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1100 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOP-8
External dimensions/length: 5 mm
External dimensions/height: 1.55 mm
External dimensions/packaging: SOP-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4936ADY-E3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET 30V 5.9A 2W
|
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