Technical parameters/drain source resistance: 0.0053 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 88 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SQR40N10-25-GE3
|
VISHAY | 类似代替 | TO-252 |
SQR40N10-25-GE3 N-channel MOSFET Transistor, 40A, 100V, 3Pin DPAK
|
||
SQR50N06-07L-GE3
|
Vishay Semiconductor | 类似代替 | TO-252 |
Mosfet, n Channel, w Diode, 60V, 50A, Dpak
|
||
SQR50N06-07L-GE3
|
Vishay Siliconix | 类似代替 | TO-252 |
Mosfet, n Channel, w Diode, 60V, 50A, Dpak
|
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