Technical parameters/drain source resistance: | 0.0064 Ω |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 136 W |
|
Technical parameters/threshold voltage: | 2 V |
|
Technical parameters/drain source voltage (Vds): | 60 V |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-252 |
|
Dimensions/Packaging: | TO-252 |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SQR40N10-25-GE3
|
VISHAY | 类似代替 | TO-252 |
SQR40N10-25-GE3 N-channel MOSFET Transistor, 40A, 100V, 3Pin DPAK
|
||
SQR50N03-06P-GE3
|
Vishay Semiconductor | 类似代替 | TO-252 |
Trans MOSFET N-CH 30V 50A 4Pin(3+Tab) DPAK
|
||
SQR50N03-06P-GE3
|
Vishay Siliconix | 类似代替 | TO-252 |
Trans MOSFET N-CH 30V 50A 4Pin(3+Tab) DPAK
|
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