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Model SI4920DY-T1
Description Power Field-Effect Transistor, 6.9A I(D), 30V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
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Brand: Vishay Siliconix
Packaging SO
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5386) Minimum order quantity(1)
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Technical parameters/drain source resistance: 25.0 mΩ

Technical parameters/polarity: N-Channel, Dual N-Channel

Technical parameters/dissipated power: 2.00 W

Technical parameters/drain source voltage (Vds): 30.0 V

Technical parameters/leakage source breakdown voltage: 30.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 6.90 A

Technical parameters/rise time: 12.0 ns

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SO

External dimensions/packaging: SO

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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