Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Other/Delete 동업체: Vishay
Other/Delete 품카테 High speed: MOSFETs
Other/Delete: General Purpose MOSFETs
Other/궟동: Dual Dual Drain
Other/Case/Package: SOIC N
Other/Soft 랜イ동터극동: N-Channel
Other/ハ레イ?동항복압: 30 V
Other/Link Files 레イ류: 6.9 A
Other/력발산: 2000 mW
Other/저항 Drain Source RDS (on): 0.025 Ohm @ 10 V
Other/Typical 하강: 15 ns
Other/Typical 상승: 10 ns
Other/표준오프い Contact Us: 60 ns
Other/ị동: REEL
Other/게イSoft - ?동항복압: 20 V
Other/동대작동온도: 150 C
Other/π소작동온도: 55 C
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
|---|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review