Technical parameters/drain source resistance: 25 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2 W
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 200 mA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/packaging: SOT-223
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSP225,115
|
NXP | 功能相似 | TO-261-4 |
NXP BSP225,115 晶体管, MOSFET, P沟道, -200 mA, -250 V, 10 ohm, -10 V, -2.8 V
|
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