Technical parameters/number of channels: 1
Technical parameters/number of pins: 4
Technical parameters/drain source resistance: 10 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.5 W
Technical parameters/drain source voltage (Vds): 250 V
Technical parameters/Continuous drain current (Ids): -225 mA
Technical parameters/Input capacitance (Ciss): 90pF @25V(Vds)
Technical parameters/rated power (Max): 1.5 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1.5W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/length: 6.7 mm
External dimensions/width: 3.7 mm
External dimensions/height: 1.7 mm
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, Power Management, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSP130,115
|
NXP | 功能相似 | TO-261-4 |
N-沟道 300 V 6 Ohm 1.5 W 表面贴装 增强型 D-MOS 晶体管 SOT-223
|
||
BSP130,115
|
Nexperia | 功能相似 | TO-261-4 |
N-沟道 300 V 6 Ohm 1.5 W 表面贴装 增强型 D-MOS 晶体管 SOT-223
|
||
BSP225,115
|
NXP | 类似代替 | TO-261-4 |
P 通道 MOSFET，Nexperia ### MOSFET 晶体管，NXP Semiconductors
|
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