Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.057 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 417 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247
External dimensions/packaging: TO-247
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIHG47N60E-GE3
|
VISHAY | 功能相似 | TO-247-3 |
VISHAY SIHG47N60E-GE3 功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.053 ohm, 10 V, 2.5 V
|
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