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Specification parameters
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Technical parameters/number of pins:

Technical parameters/drain source resistance:

0.053 Ω

Technical parameters/polarity:

N-Channel

Technical parameters/dissipated power:

357 W

Technical parameters/threshold voltage:

2.5 V

Technical parameters/drain source voltage (Vds):

600 V

Technical parameters/Continuous drain current (Ids):

47A

Technical parameters/rise time:

11 ns

Technical parameters/forward voltage (Max):

1.2 V

Technical parameters/Input capacitance (Ciss):

4810pF @100V(Vds)

Technical parameters/rated power (Max):

357 W

Technical parameters/descent time:

13 ns

Technical parameters/operating temperature (Max):

150 ℃

Technical parameters/operating temperature (Min):

-55 ℃

Technical parameters/dissipated power (Max):

357 W

Encapsulation parameters/installation method:

Through Hole

Package parameters/number of pins:

Encapsulation parameters/Encapsulation:

TO-247-3

Dimensions/Length:

15.87 mm

Dimensions/Width:

5.31 mm

Dimensions/Height:

20.7 mm

Dimensions/Packaging:

TO-247-3

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

Other/Product Lifecycle:

Active

Other/Packaging Methods:

Tube

Other/Minimum Packaging:

500

Other/Manufacturing Applications:

Lighting, industrial, motor drive and control, alternative energy, portable equipment, communication and networking, power management, computers and computer peripherals

Compliant with standards/RoHS standards:

Compliant wit

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
FCH47N60F_F133	ON Semiconductor	功能相似	TO-247	FAIRCHILD SEMICONDUCTOR FCH47N60F_F133 功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.062 ohm, 10 V, 3 V	PDF
FCH47N60_F133	Fairchild	功能相似	TO-247-3	FAIRCHILD SEMICONDUCTOR FCH47N60_F133 功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.058 ohm, 10 V, 3 V	PDF
FCH47N60_F133	ON Semiconductor	功能相似	TO-247	FAIRCHILD SEMICONDUCTOR FCH47N60_F133 功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.058 ohm, 10 V, 3 V
SIHG47N60E-E3	Vishay Siliconix	类似代替	TO-247-3	晶体管, MOSFET, N沟道, 47 A, 600 V, 0.053 ohm, 10 V, 2.5 V	PDF
SIHG47N60E-E3	VISHAY	类似代替	TO-247-3	晶体管, MOSFET, N沟道, 47 A, 600 V, 0.053 ohm, 10 V, 2.5 V	PDF

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ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
Tel: +86-0755-82866643