Technical parameters/output current: 21.0 mA
Technical parameters/power supply current: 86 µA
Technical parameters/number of circuits: 2
Technical parameters/number of channels: 2
Technical parameters/conversion rate: 110 mV/μs
Technical parameters/gain bandwidth product: 350 kHz
Technical parameters/input compensation voltage: 1 mV
Technical parameters/input bias current: 0.002 pA
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.45 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
LPC662IM/NOPB
|
National Semiconductor | 类似代替 | SOIC-8 |
TEXAS INSTRUMENTS LPC662IM/NOPB 运算放大器, 双路, 350 kHz, 2个放大器, 0.11 V/µs, 5V 至 15V, SOIC, 8 引脚
|
||
LPC662IM/NOPB
|
TI | 类似代替 | SOIC-8 |
TEXAS INSTRUMENTS LPC662IM/NOPB 运算放大器, 双路, 350 kHz, 2个放大器, 0.11 V/µs, 5V 至 15V, SOIC, 8 引脚
|
||
LPC662IMX/NOPB
|
TI | 类似代替 | SOIC-8 |
2 通道、RRO、低功耗、5.5V 运算放大器 8-SOIC -40 to 85
|
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