Technical parameters/output current: 22mA @5V
Technical parameters/power supply current: 86 µA
Technical parameters/number of circuits: 2
Technical parameters/number of channels: 2
Technical parameters/common mode rejection ratio: 63 dB
Technical parameters/Input compensation drift: 0.00 V/K
Technical parameters/conversion rate: 110 mV/μs
Technical parameters/gain bandwidth product: 350 kHz
Technical parameters/input compensation voltage: 1 mV
Technical parameters/input bias current: .002 pA
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/Common Mode Rejection Ratio (Min): 63 dB
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
LPC662IM/NOPB
|
National Semiconductor | 类似代替 | SOIC-8 |
TEXAS INSTRUMENTS LPC662IM/NOPB 运算放大器, 双路, 350 kHz, 2个放大器, 0.11 V/µs, 5V 至 15V, SOIC, 8 引脚
|
||
LPC662IM/NOPB
|
TI | 类似代替 | SOIC-8 |
TEXAS INSTRUMENTS LPC662IM/NOPB 运算放大器, 双路, 350 kHz, 2个放大器, 0.11 V/µs, 5V 至 15V, SOIC, 8 引脚
|
||
LPC662IMX
|
National Semiconductor | 类似代替 | SOP |
运算放大器 - 运放 Low Power CMOS Dual Operational Amplifier 8-SOIC -40 to 85
|
||
LPC662IMX
|
TI | 类似代替 | SOIC-8 |
运算放大器 - 运放 Low Power CMOS Dual Operational Amplifier 8-SOIC -40 to 85
|
||
TS27L2AIDT
|
ST Microelectronics | 功能相似 | SO-8 |
gp 16v so8
|
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