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Model BF998RA-GS08
Description Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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Brand: Vishay Intertechnology
Packaging SOT-343
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1251) Minimum order quantity(1)
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Technical parameters/dissipated power: 200 mW

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SOT-343

External dimensions/packaging: SOT-343

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BF998 BF998 Infineon 功能相似 SOT-143
N沟道双栅MOS -场效应四极管，耗尽型 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
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BF998 BF998 Vishay Semiconductor 功能相似
N沟道双栅MOS -场效应四极管，耗尽型 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
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BF998R BF998R Siemens Semiconductor 功能相似 SOT-143
N沟道双栅MOS -场效应四极管，耗尽型 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
PDF
BF998R BF998R Vishay Semiconductor 功能相似
N沟道双栅MOS -场效应四极管，耗尽型 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
PDF

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