Technical parameters/dissipated power: | 200 mW |
|
Technical parameters/drain source voltage (Vds): | 12 V |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | SOT-143 |
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Dimensions/Packaging: | SOT-143 |
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Other/Product Lifecycle: | Not Recommended |
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Other/Packaging Methods: | Cut Tape (CT) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with standard/REACH SVHC version: | 2014/12/17 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BF998
|
Infineon | 类似代替 | SOT-143 |
NXP BF998 晶体管, 射频FET, 12 V, 30 mA, 200 mW, SOT-143B
|
||
BF998
|
Vishay Semiconductor | 类似代替 |
NXP BF998 晶体管, 射频FET, 12 V, 30 mA, 200 mW, SOT-143B
|
|||
BF998,215
|
NXP | 类似代替 | TO-253-4 |
Trans RF MOSFET N-CH 12V 0.03A 4Pin(3+Tab) SOT-143B T/R
|
||
|
|
Vishay Intertechnology | 功能相似 | SOT-343 |
N沟道双栅MOS -场效应四极管,耗尽型 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
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