Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 5.50 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 60.0 W
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/leakage source breakdown voltage: 600 V
Technical parameters/Continuous drain current (Ids): 5.50 A
Technical parameters/rise time: 25.0 ns
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFIB6N60A
|
Vishay Siliconix | 完全替代 | TO-220-3 |
MOSFET N-CH 600V 5.5A TO220FP
|
||
IRFIB6N60A
|
VISHAY | 完全替代 | TO-220 |
MOSFET N-CH 600V 5.5A TO220FP
|
||
IRFIB6N60A
|
IRF | 完全替代 |
MOSFET N-CH 600V 5.5A TO220FP
|
|||
STF8N65M5
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STF8N65M5 功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.56 ohm, 10 V, 4 V
|
||
STP10NK60ZFP
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP10NK60ZFP 功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.65 ohm, 10 V, 3.75 V
|
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