Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.56 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 25 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 650 V
Technical parameters/Continuous drain current (Ids): 7A
Technical parameters/rise time: 14 ns
Technical parameters/Input capacitance (Ciss): 690pF @100V(Vds)
Technical parameters/rated power (Max): 25 W
Technical parameters/descent time: 11 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/dissipated power (Max): 25W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Other/Manufacturing Applications: Industrial, Industry, Power Management, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STF5N95K3
|
ST Microelectronics | 类似代替 | TO-220-3 |
N 通道 MDmesh™ K3 系列，SuperMESH3™, STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
|
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