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Model IRFP048NPBF
Description N Channel power MOSFETs 60A to 79A, Infineon's discrete HEXFET ® The power MOSFET series includes surface mount and lead packaged N-channel devices, with a form factor that can handle almost any board layout and thermal design challenge. Throughout the entire range, the reference on resistance reduces conduction losses, allowing designers to provide optimal system efficiency. ###MOSFET transistor, Infineon (IR) Infineon's comprehensive and robust combination of single and dual N-channel and P-channel devices provides fast switching speed and can meet various power requirements. The application scope ranges from AC-DC and DC-DC power supplies to audio and consumer electronics products, from motor control to lighting and household appliances.
Product QR code
Brand: Infineon
Packaging TO-247-3
Delivery time
Packaging method Rail, Tube
Standard packaging quantity 1
10.81  yuan 10.81yuan
5+:
$ 12.6430
50+:
$ 12.1027
200+:
$ 11.8002
500+:
$ 11.7245
1000+:
$ 11.6489
2500+:
$ 11.5624
5000+:
$ 11.5084
7500+:
$ 11.4544
Quantity
5+
50+
200+
500+
1000+
Price
$12.6430
$12.1027
$11.8002
$11.7245
$11.6489
Price $ 12.6430 $ 12.1027 $ 11.8002 $ 11.7245 $ 11.6489
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8424) Minimum order quantity(5)
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Technical parameters/rated power: 130 W

Technical parameters/number of channels: 1

Technical parameters/drain source resistance: 0.016 Ω

Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 140 W

Technical parameters/threshold voltage: 4 V

Technical parameters/input capacitance: 1900pF @25V

Technical parameters/drain source voltage (Vds): 55 V

Technical parameters/leakage source breakdown voltage: 55 V

Technical parameters/Continuous drain current (Ids): 64A

Technical parameters/rise time: 78 ns

Technical parameters/Input capacitance (Ciss): 1900pF @25V(Vds)

Technical parameters/descent time: 48 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 140W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-247-3

External dimensions/length: 15.9 mm

External dimensions/width: 5.31 mm

External dimensions/height: 20.3 mm

External dimensions/packaging: TO-247-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Rail, Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRFP048 IRFP048 International Rectifier 功能相似 Through Hole
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IRFP048 IRFP048 Infineon 功能相似
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