Technical parameters/dissipated power: 3.1W (Ta), 130W (Tc)
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Input capacitance (Ciss): 1300pF @25V(Vds)
Technical parameters/rated power (Max): 3.1 W
Technical parameters/dissipated power (Max): 3.1W (Ta), 130W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-262-3
External dimensions/length: 10.67 mm
External dimensions/width: 4.83 mm
External dimensions/height: 9.65 mm
External dimensions/packaging: TO-262-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF830ALPBF
|
International Rectifier | 功能相似 | TO-262 |
MOSFET N-CH 500V 5A TO262-3
|
||
IRF830ALPBF
|
Vishay Semiconductor | 功能相似 | TO-262 |
MOSFET N-CH 500V 5A TO262-3
|
||
IRF830ALPBF
|
VISHAY | 功能相似 | TO-262 |
MOSFET N-CH 500V 5A TO262-3
|
||
IRFBC40LPBF
|
VISHAY | 完全替代 | TO-262-3 |
MOSFET N-CH 600V 6.2A TO-262
|
||
IRFBC40LPBF
|
International Rectifier | 完全替代 | TO-262 |
MOSFET N-CH 600V 6.2A TO-262
|
||
IRFBC40LPBF
|
LiteOn | 完全替代 | TO-262 |
MOSFET N-CH 600V 6.2A TO-262
|
||
IRFBC40LPBF
|
Vishay Siliconix | 完全替代 | TO-262-3 |
MOSFET N-CH 600V 6.2A TO-262
|
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