Technical parameters/drain source resistance: | 1.2 Ω |
|
Technical parameters/polarity: | N-CH |
|
Technical parameters/drain source voltage (Vds): | 600 V |
|
Technical parameters/Continuous drain current (Ids): | 6.2A |
|
Technical parameters/rise time: | 18 ns |
|
Technical parameters/Input capacitance (Ciss): | 1300pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 3.1 W |
|
Technical parameters/descent time: | 20 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 3100 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-262-3 |
|
Dimensions/Packaging: | TO-262-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Packaging Methods: | Tube |
|
Other/Minimum Packaging: | 1000 |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFBC40L
|
IRF | 完全替代 |
MOSFET N-CH 600V 6.2A TO-262
|
|||
IRFBC40L
|
Vishay Siliconix | 完全替代 | TO-262-3 |
MOSFET N-CH 600V 6.2A TO-262
|
||
IRFBC40L
|
International Rectifier | 完全替代 | TO-262 |
MOSFET N-CH 600V 6.2A TO-262
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review