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Model 2N6040G

Description PNP Compound transistors, such as On Semiconductor, are composite structures that include two bipolar transistors (integrated or separated devices). These devices are connected, so the second transistor further amplifies the current amplified by the first transistor. ###Standard Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard. ### Bipolar transistors, various bipolar transistors from On Semiconductor, including the following categories: small signal transistors, general-purpose transistors, dual NPN and PNP transistors, power transistors, high-voltage transistors, RF bipolar transistors, low-noise, dual matched, and complex bipolar transistors

Brand: ON Semiconductor

Packaging TO-220-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

5+:

$ 4.9086

25+:

$ 4.5450

50+:

$ 4.2905

100+:

$ 4.1814

500+:

$ 4.1087

2500+:

$ 4.0178

5000+:

$ 3.9814

10000+:

$ 3.9269

Price	$ 4.9086	$ 4.5450	$ 4.2905	$ 4.1814	$ 4.1087
Start batch production	5+	25+	50+	100+	500+

Freight charges： In stock Freight rate：$13.00

Quantity：

Inventory(8178) Minimum order quantity(5)

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Technical parameters/rated voltage (DC): -60.0 V

Technical parameters/rated current: 8.00 A

Technical parameters/output voltage: 60 V

Technical parameters/output current: 8 A

Technical parameters/number of pins: 3

Technical parameters/polarity: PNP, P-Channel

Technical parameters/dissipated power: 75 W

Technical parameters/breakdown voltage (collector emitter): 60 V

Technical parameters/thermal resistance: 57℃/W (RθJA)

Technical parameters/maximum allowable collector current: 8A

Technical parameters/minimum current amplification factor (hFE): 1000 @4A, 4V

Technical parameters/Maximum current amplification factor (hFE): 20000

Technical parameters/rated power (Max): 75 W

Technical parameters/DC current gain (hFE): 1000

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -65 ℃

Technical parameters/dissipated power (Max): 75 W

Technical parameters/input voltage: 2.8 V

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/length: 15.75 mm

External dimensions/width: 4.83 mm

External dimensions/height: 4.82 mm

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standard/REACH SVHC version: 2016/06/20

Customs information/ECCN code: EAR99

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