Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 370 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 190A
Technical parameters/rise time: 160 ns
Technical parameters/Input capacitance (Ciss): 11490pF @50V(Vds)
Technical parameters/descent time: 87 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 370000 mW
Package parameters/number of pins: 7
Encapsulation parameters/Encapsulation: TO-263-7
External dimensions/length: 10 mm
External dimensions/width: 9.25 mm
External dimensions/height: 4.4 mm
External dimensions/packaging: TO-263-7
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AUIRLS4030-7P
|
Infineon | 类似代替 | TO-263-7 |
INFINEON AUIRLS4030-7P 晶体管, MOSFET, N沟道, 190 A, 100 V, 0.0032 ohm, 10 V, 1 V
|
||
AUIRLS4030-7P
|
International Rectifier | 类似代替 | TO-252-3 |
INFINEON AUIRLS4030-7P 晶体管, MOSFET, N沟道, 190 A, 100 V, 0.0032 ohm, 10 V, 1 V
|
||
IRLS4030-7PPBF
|
International Rectifier | 类似代替 | TO-263-7 |
INFINEON IRLS4030-7PPBF 晶体管, MOSFET, N沟道, 110 A, 100 V, 0.0032 ohm, 4.5 V, 2.5 V
|
||
IRLS4030-7PPBF
|
Infineon | 类似代替 | TO-263-7 |
INFINEON IRLS4030-7PPBF 晶体管, MOSFET, N沟道, 110 A, 100 V, 0.0032 ohm, 4.5 V, 2.5 V
|
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