Technical parameters/drain source resistance: 3.9 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 370 W
Technical parameters/product series: IRLS4030-7P
Technical parameters/threshold voltage: 2.5 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 190 A
Technical parameters/Input capacitance (Ciss): 11490pF @50V(Vds)
Technical parameters/rated power (Max): 370 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 7
Encapsulation parameters/Encapsulation: TO-263-7
External dimensions/packaging: TO-263-7
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AUIRLS4030-7P
|
Infineon | 类似代替 | TO-263-7 |
INFINEON AUIRLS4030-7P 晶体管, MOSFET, N沟道, 190 A, 100 V, 0.0032 ohm, 10 V, 1 V
|
||
AUIRLS4030-7P
|
International Rectifier | 类似代替 | TO-252-3 |
INFINEON AUIRLS4030-7P 晶体管, MOSFET, N沟道, 190 A, 100 V, 0.0032 ohm, 10 V, 1 V
|
||
IRLS4030TRL7PP
|
Infineon | 完全替代 | TO-263-7 |
INFINEON IRLS4030TRL7PP 晶体管, MOSFET, N沟道, 190 A, 100 V, 0.0032 ohm, 10 V, 2.5 V 新
|
||
IRLS4030TRL7PP
|
International Rectifier | 完全替代 | TO-263-7 |
INFINEON IRLS4030TRL7PP 晶体管, MOSFET, N沟道, 190 A, 100 V, 0.0032 ohm, 10 V, 2.5 V 新
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review