Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 1.1 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 350 mW
Technical parameters/threshold voltage: 1.75 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 0.3A
Technical parameters/Input capacitance (Ciss): 55pF @25V(Vds)
Technical parameters/rated power (Max): 350 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/dissipated power (Max): 350mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7002ET1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR 2N7002ET1G 晶体管, MOSFET, N沟道, 310 mA, 60 V, 0.86 ohm, 10 V, 1 V
|
||
2N7002K-7
|
Diodes Zetex | 功能相似 | SOT-23 |
2N7002K 系列 60 V 2 Ohm N 沟道 增强模式 Mosfet - SOT-23-3
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2N7002K-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOT-23-3 |
60V,0.3A,N沟道MOSFET
|
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2N7002K-T1-GE3
|
Vishay Intertechnology | 功能相似 |
60V,0.3A,N沟道MOSFET
|
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