Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 250 mW
Technical parameters/minimum current amplification factor (hFE): 420
Technical parameters/DC current gain (hFE): 600
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/length: 3 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCW33
|
ON Semiconductor | 类似代替 | SOT-23 |
小信号 NPN 晶体管，Nexperia ### 双极晶体管，Nexperia
|
||
|
|
Central Semiconductor | 类似代替 | SOT-23 |
小信号 NPN 晶体管，Nexperia ### 双极晶体管，Nexperia
|
||
BCW33
|
Philips | 类似代替 | SOT-23 |
小信号 NPN 晶体管，Nexperia ### 双极晶体管，Nexperia
|
||
BCW33
|
NXP | 类似代替 | SOT-23 |
小信号 NPN 晶体管，Nexperia ### 双极晶体管，Nexperia
|
||
BCW33LT3G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
NPN 晶体管，ON Semiconductor ### 标准 带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。 ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别： 小信号晶体管 功率晶体管 双晶体管 复合晶体管对 高电压晶体管 射频晶体管 双极/FET 晶体管
|
||
BZX384-C12,115
|
NXP | 功能相似 | SOD-323 |
NXP BZX384-C12,115. 齐纳二极管, 12V, SOD-323, 整卷
|
||
BZX384-C12,115
|
Nexperia | 功能相似 | SOD-323-2 |
NXP BZX384-C12,115. 齐纳二极管, 12V, SOD-323, 整卷
|
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