Technical parameters/rated voltage (DC): 32.0 V
Technical parameters/rated current: 100 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 225 mW
Technical parameters/breakdown voltage (collector emitter): 32 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 420
Technical parameters/rated power (Max): 300 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3.04 mm
External dimensions/width: 2.64 mm
External dimensions/height: 1.11 mm
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCW33LT1
|
Motorola | 类似代替 | SOT-23-3 |
通用晶体管( NPN硅) General Purpose Transistor(NPN Silicon)
|
||
BCW33LT1
|
ON Semiconductor | 类似代替 | SOT-23-3 |
通用晶体管( NPN硅) General Purpose Transistor(NPN Silicon)
|
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