Technical parameters/rated voltage (DC): -32.0 V
Technical parameters/rated current: -4.00 A
Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 32 V
Technical parameters/maximum allowable collector current: 4A
Technical parameters/minimum current amplification factor (hFE): 85 @500mA, 1V
Technical parameters/rated power (Max): 36 W
Technical parameters/dissipated power (Max): 36 W
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-126-3
External dimensions/packaging: TO-126-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BD436S
|
ON Semiconductor | 类似代替 | TO-126-3 |
TRANSISTOR PNP 32V 4A TO-126
|
||
BD436STU
|
ON Semiconductor | 类似代替 | TO-126-3 |
TRANSISTOR PNP 32V 4A TO-126
|
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