Technical parameters/rated voltage (DC): -25.0 V
Technical parameters/rated current: -500 mA
Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 25 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 100 @100mA, 1V
Technical parameters/rated power (Max): 300 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Nexperia | 功能相似 | SOT-23-3 |
TO-236AB PNP 25V 0.5A
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|
Leshan Radio | 类似代替 |
通用晶体管（电压和电流均为负值PNP晶体管） General Purpose Transistors (Voltage and Current are Negative for PNP Transistors)
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|||
BCX18LT1
|
ON Semiconductor | 类似代替 | SOT-23-3 |
通用晶体管（电压和电流均为负值PNP晶体管） General Purpose Transistors (Voltage and Current are Negative for PNP Transistors)
|
||
MMBT4403LT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR MMBT4403LT1G 单晶体管 双极, 通用, PNP, -40 V, 200 MHz, 300 mW, -600 mA, 200 hFE
|
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