Technical parameters/rated power: 1 W
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 1.5 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.00 W
Technical parameters/breakdown voltage of gate source: ±10.0 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/width: 4.19 mm
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/ECCN code: EAR99
Customs information/HTS code: 8541900000
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
LP0701N3
|
Microchip | 功能相似 | TO-92 |
Trans MOSFET P-CH 16.5V 0.5A 3Pin TO-92
|
||
LP0701N3-G
|
Microchip | 功能相似 | TO-226-3 |
晶体管, MOSFET, P沟道, -500 mA, -16.5 V, 1.3 ohm, -5 V, -700 mV
|
||
LP0701N3-G
|
Supertex | 功能相似 | TO-92-3 |
晶体管, MOSFET, P沟道, -500 mA, -16.5 V, 1.3 ohm, -5 V, -700 mV
|
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