Technical parameters/rated power: 1 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 1.3 Ω
Technical parameters/polarity: P-CH
Technical parameters/dissipated power: 1 W
Technical parameters/drain source voltage (Vds): 16.5 V
Technical parameters/Continuous drain current (Ids): 0.5A
Technical parameters/rise time: 20 ns
Technical parameters/Input capacitance (Ciss): 250pF @15V(Vds)
Technical parameters/descent time: 30 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/length: 5.21 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-226-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
LP0701N3
|
Microchip | 功能相似 | TO-92 |
Trans MOSFET P-CH 16.5V 0.5A 3Pin TO-92
|
||
LP0701N3-G
|
Microchip | 功能相似 | TO-226-3 |
晶体管, MOSFET, P沟道, -500 mA, -16.5 V, 1.3 ohm, -5 V, -700 mV
|
||
LP0701N3-G
|
Supertex | 功能相似 | TO-92-3 |
晶体管, MOSFET, P沟道, -500 mA, -16.5 V, 1.3 ohm, -5 V, -700 mV
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review