Technical parameters/rated voltage (DC): -80.0 V
Technical parameters/rated current: -1.00 A
Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-223-4
External dimensions/packaging: SOT-223-4
Physical parameters/materials: Silicon
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Diodes | 功能相似 | SOT-223 |
PNP硅晶体管自动对焦 PNP Silicon AF Transistors
|
||
BCP53-10
|
Diotec Semiconductor | 功能相似 |
PNP硅晶体管自动对焦 PNP Silicon AF Transistors
|
|||
BCP53-10
|
Philips | 功能相似 | SC-73 |
PNP硅晶体管自动对焦 PNP Silicon AF Transistors
|
||
BCP53-10
|
NXP | 功能相似 | SOT-223 |
PNP硅晶体管自动对焦 PNP Silicon AF Transistors
|
||
BCP53-10
|
CJ | 功能相似 | SOT-223 |
PNP硅晶体管自动对焦 PNP Silicon AF Transistors
|
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