Technical parameters/number of pins: 4
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 650 mW
Technical parameters/DC current gain (hFE): 63
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/packaging: SOT-223
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Continental Device | 功能相似 |
ON Semiconductor BCP52 , PNP 晶体管, 1.2 A, Vce=60 V, HFE:150, 3 + Tab引脚 SOT-223封装
|
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BCP52
|
Siemens Semiconductor | 功能相似 |
ON Semiconductor BCP52 , PNP 晶体管, 1.2 A, Vce=60 V, HFE:150, 3 + Tab引脚 SOT-223封装
|
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BCP52
|
TI | 功能相似 |
ON Semiconductor BCP52 , PNP 晶体管, 1.2 A, Vce=60 V, HFE:150, 3 + Tab引脚 SOT-223封装
|
|||
BCP52
|
Fairchild | 功能相似 | TO-261-4 |
ON Semiconductor BCP52 , PNP 晶体管, 1.2 A, Vce=60 V, HFE:150, 3 + Tab引脚 SOT-223封装
|
||
BCP53-10,115
|
NXP | 完全替代 | TO-261-4 |
NXP BCP53-10,115 单晶体管 双极, PNP, -80 V, 145 MHz, 650 mW, -1 A, 63 hFE
|
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BCP53-10T1G
|
ON Semiconductor | 功能相似 | TO-261-4 |
PNP 晶体管，超过 1A，On Semiconductor ### 标准 带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。
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