Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 0.1A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-92
External dimensions/packaging: TO-92
Other/Product Lifecycle: Obsolete
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC548BG
|
ON Semiconductor | 功能相似 | TO-92-3 |
放大器晶体管 Amplifier Transistors
|
||
|
|
Rochester | 功能相似 | TO-92 |
ON Semiconductor BC549BTA , NPN 晶体管, 100 mA, Vce=30 V, HFE:110, 1 MHz, 3引脚 TO-92封装
|
||
MPSW42
|
ON Semiconductor | 功能相似 | TO-226-3 |
一瓦高压晶体管 One Watt High Voltage Transistor
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review