Technical parameters/frequency: 50 MHz
Technical parameters/dissipated power: 0.625 W
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 50 @100mA, 1V
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Infineon | 类似代替 |
达林顿晶体管NPN硅 Darlington Transistors NPN Silicon
|
|||
BC618
|
NXP | 类似代替 | SOT-54 |
达林顿晶体管NPN硅 Darlington Transistors NPN Silicon
|
||
|
|
Nexperia | 类似代替 |
达林顿晶体管NPN硅 Darlington Transistors NPN Silicon
|
|||
BC618
|
Philips | 类似代替 | SPT |
达林顿晶体管NPN硅 Darlington Transistors NPN Silicon
|
||
BC618
|
ON Semiconductor | 类似代替 | TO-226-3 |
达林顿晶体管NPN硅 Darlington Transistors NPN Silicon
|
||
BC618G
|
ON Semiconductor | 类似代替 | TO-226-3 |
达林顿晶体管NPN硅 Darlington Transistors NPN Silicon
|
||
BC618RL1G
|
ON Semiconductor | 类似代替 | TO-226-3 |
达林顿晶体管NPN硅 Darlington Transistors NPN Silicon
|
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