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Model BC618RL1G
Description 达林顿晶体管NPN硅 Darlington Transistors NPN Silicon
Product QR code
Brand: ON Semiconductor
Packaging TO-226-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.24  yuan 0.24yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9580) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

55.0 V

 

Technical parameters/rated current:

1.00 A

 

Technical parameters/polarity:

NPN

 

Technical parameters/dissipated power:

625 mW

 

Technical parameters/breakdown voltage (collector emitter):

55 V

 

Technical parameters/Maximum allowable collector current:

1A

 

Technical parameters/minimum current amplification factor (hFE):

10000 @200mA, 5V

 

Technical parameters/rated power (Max):

625 mW

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/gain bandwidth:

150MHz (Min)

 

Technical parameters/dissipated power (Max):

625 mW

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-226-3

 

Dimensions/Packaging:

TO-226-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Customs information/ECCN code:

EAR99

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
KSP05TA KSP05TA ON Semiconductor 类似代替 TO-226-3
TRANS NPN 60V 0.5A TO-92
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TRANS NPN 60V 0.5A TO-92
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KSP55TA KSP55TA ON Semiconductor 类似代替 TO-226-3
KSP55: PNP外延硅晶体管
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