Technical parameters/frequency: 100 MHz
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.5 W
Technical parameters/breakdown voltage (collector emitter): 120 V
Technical parameters/maximum allowable collector current: 0.05A
Technical parameters/minimum current amplification factor (hFE): 200 @1mA, 6V
Technical parameters/rated power (Max): 500 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/height: 4.58 mm
External dimensions/packaging: TO-226-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Ammo Pack
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSA992FATA
|
ON Semiconductor | 类似代替 | TO-226-3 |
Trans GP BJT PNP 120V 0.05A 3Pin TO-92 Ammo
|
||
KSA992FATA
|
Fairchild | 类似代替 | TO-226-3 |
Trans GP BJT PNP 120V 0.05A 3Pin TO-92 Ammo
|
||
KSA992PTA
|
Freescale | 功能相似 |
Trans GP BJT PNP 120V 0.05A 3Pin TO-92 Ammo
|
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