Technical parameters/frequency: | 100 MHz |
|
Technical parameters/dissipated power: | 0.5 W |
|
Technical parameters/breakdown voltage (collector emitter): | 120 V |
|
Technical parameters/minimum current amplification factor (hFE): | 200 @1mA, 6V |
|
Technical parameters/rated power (Max): | 500 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 500 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-226-3 |
|
Dimensions/Packaging: | TO-226-3 |
|
Physical parameters/materials: | Silicon |
|
Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSA992FATA
|
ON Semiconductor | 类似代替 | TO-226-3 |
Trans GP BJT PNP 120V 0.05A 3Pin TO-92 Ammo
|
||
KSA992FATA
|
Fairchild | 类似代替 | TO-226-3 |
Trans GP BJT PNP 120V 0.05A 3Pin TO-92 Ammo
|
||
KSA992PTA
|
Freescale | 功能相似 |
Trans GP BJT PNP 120V 0.05A 3Pin TO-92 Ammo
|
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