Technical parameters/forward voltage: 1V @6A
Technical parameters/dissipated power: 6700 mW
Technical parameters/Maximum forward surge current (Ifsm): 250 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 6700 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SIP-4
External dimensions/packaging: SIP-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
GBU6B
|
Diotec Semiconductor | 功能相似 | Through Hole |
二极管 桥式整流, 单相, 100 V, 6 A, SIP, 1 V, 4 引脚
|
||
|
|
Leshan Radio | 功能相似 | GBU |
二极管 桥式整流, 单相, 100 V, 6 A, SIP, 1 V, 4 引脚
|
||
GBU6B
|
Vishay Semiconductor | 功能相似 |
二极管 桥式整流, 单相, 100 V, 6 A, SIP, 1 V, 4 引脚
|
|||
|
|
Semikron | 功能相似 |
二极管 桥式整流, 单相, 100 V, 6 A, SIP, 1 V, 4 引脚
|
|||
GBU6B
|
GeneSiC Semiconductor | 功能相似 | SIP-4 |
二极管 桥式整流, 单相, 100 V, 6 A, SIP, 1 V, 4 引脚
|
||
GBU6B
|
Microsemi | 功能相似 |
二极管 桥式整流, 单相, 100 V, 6 A, SIP, 1 V, 4 引脚
|
|||
GBU6B-BP
|
Micro Commercial Components | 功能相似 | SIP-4 |
GBU 100V 6A
|
||
GBU6B-E3/45
|
VISHAY | 功能相似 | GBU |
VISHAY GBU6B-E3/45 二极管 桥式整流, 单相, 100 V, 6 A, SIP, 1 V, 4 引脚
|
||
KBU6B-E4/51
|
Vishay Semiconductor | 功能相似 | SIP-4 |
桥式整流器 6.0 Amp 100 Volt
|
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