Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 6.00 A
Technical parameters/capacitors: 50.0 pF
Technical parameters/output current: ≤6.00 A
Technical parameters/forward voltage: 1 V
Technical parameters/Maximum reverse voltage (Vrrm): 100V
Technical parameters/forward current: 6 A
Technical parameters/Maximum forward surge current (Ifsm): 175 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SIP-4
External dimensions/length: 22.3 mm
External dimensions/width: 3.56 mm
External dimensions/height: 18.8 mm
External dimensions/packaging: SIP-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
GBU6B
|
Diotec Semiconductor | 功能相似 | Through Hole |
FAIRCHILD SEMICONDUCTOR GBU6B 二极管 桥式整流, 单相, 100 V, 6 A, SIP, 1 V, 4 引脚
|
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|
Leshan Radio | 功能相似 | GBU |
FAIRCHILD SEMICONDUCTOR GBU6B 二极管 桥式整流, 单相, 100 V, 6 A, SIP, 1 V, 4 引脚
|
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GBU6B
|
Vishay Semiconductor | 功能相似 |
FAIRCHILD SEMICONDUCTOR GBU6B 二极管 桥式整流, 单相, 100 V, 6 A, SIP, 1 V, 4 引脚
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Semikron | 功能相似 |
FAIRCHILD SEMICONDUCTOR GBU6B 二极管 桥式整流, 单相, 100 V, 6 A, SIP, 1 V, 4 引脚
|
|||
GBU6B
|
GeneSiC Semiconductor | 功能相似 | SIP-4 |
FAIRCHILD SEMICONDUCTOR GBU6B 二极管 桥式整流, 单相, 100 V, 6 A, SIP, 1 V, 4 引脚
|
||
GBU6B
|
Microsemi | 功能相似 |
FAIRCHILD SEMICONDUCTOR GBU6B 二极管 桥式整流, 单相, 100 V, 6 A, SIP, 1 V, 4 引脚
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