Technical parameters/dissipated power: 0.35 W
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 300 @1mA, 5V
Technical parameters/rated power (Max): 350 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 350 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TO-78-6
External dimensions/packaging: TO-78-6
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N2920
|
Solid State | 类似代替 | TO-206 |
NPN硅晶体管双 NPN SILICON DUAL TRANSISTOR
|
||
|
|
Semicoa Semiconductor | 类似代替 | TO-78 |
NPN硅晶体管双 NPN SILICON DUAL TRANSISTOR
|
||
2N2920
|
Microsemi | 类似代替 | TO-78-6 |
NPN硅晶体管双 NPN SILICON DUAL TRANSISTOR
|
||
2N2920
|
Solid State Devices | 类似代替 | TO-78 |
NPN硅晶体管双 NPN SILICON DUAL TRANSISTOR
|
||
JANS2N2920
|
Microsemi | 完全替代 | TO-206 |
Trans GP BJT NPN 60V 0.03A 6Pin TO-78
|
||
|
|
ON Semiconductor | 完全替代 |
JANTX 系列 60 V 30 mA NPN 通孔 硅 双 晶体管 - TO-78
|
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