Technical parameters/dissipated power: 350 mW
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 300 @1mA, 5V
Technical parameters/rated power (Max): 350 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 350 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TO-78-6
External dimensions/packaging: TO-78-6
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 200℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
ON Semiconductor | 类似代替 |
JANTX 系列 60 V 30 mA NPN 通孔 硅 双 晶体管 - TO-78
|
|||
JANTX2N2920L
|
Microsemi | 类似代替 | TO-78-6 |
JANTX 系列 60 V 30 mA 通孔 双 NPN 双极 晶体管 - TO-78-6
|
||
JANTX2N2920L
|
Aeroflex | 类似代替 |
JANTX 系列 60 V 30 mA 通孔 双 NPN 双极 晶体管 - TO-78-6
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review