Technical parameters/polarity: NPN
Technical parameters/dissipated power: 1 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 3A
Technical parameters/minimum current amplification factor (hFE): 30 @1.5A, 2V
Technical parameters/rated power (Max): 1 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-205
External dimensions/packaging: TO-205
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards:
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Motorola | 功能相似 | TO-39-3 |
NPN型中功率硅晶体管 NPN MEDIUM POWER SILICON TRANSISTOR
|
||
2N3507
|
Central Semiconductor | 功能相似 | TO-39 |
NPN型中功率硅晶体管 NPN MEDIUM POWER SILICON TRANSISTOR
|
||
JANTX2N3507
|
Microsemi | 类似代替 | TO-39 |
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3
|
||
|
|
Semicoa Semiconductor | 类似代替 | TO-39 |
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3
|
||
|
JANTX2N3507A
|
Motorola | 完全替代 | TO-39 |
TO-39 NPN 50V 3A
|
||
|
|
Microsemi | 完全替代 | TO-5 |
TO-5 NPN 50V 3A
|
||
JANTXV2N3507
|
Microsemi | 功能相似 | TO-39 |
TO-39 NPN 50V 3A
|
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