Technical parameters/polarity: NPN
Technical parameters/dissipated power: 1000 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 3A
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Motorola | 类似代替 | TO-39-3 |
NPN型中功率硅晶体管 NPN MEDIUM POWER SILICON TRANSISTOR
|
||
2N3507
|
Central Semiconductor | 类似代替 | TO-39 |
NPN型中功率硅晶体管 NPN MEDIUM POWER SILICON TRANSISTOR
|
||
JANTX2N3507A
|
Motorola | 完全替代 | TO-39 |
TO-39 NPN 50V 3A
|
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