Technical parameters/dissipated power: 800mW (Ta), 25W (Tc)
Technical parameters/drain source voltage (Vds): 400 V
Technical parameters/rated power (Max): 800 mW
Technical parameters/dissipated power (Max): 800mW (Ta), 25W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-205
External dimensions/packaging: TO-205
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6800
|
TT Electronics Resistors | 功能相似 |
Trans MOSFET N-CH 400V 3A 3Pin TO-39
|
|||
2N6800
|
Microchip | 功能相似 | TO-205-3 |
Trans MOSFET N-CH 400V 3A 3Pin TO-39
|
||
2N6800
|
Infineon | 功能相似 | TO-205 |
Trans MOSFET N-CH 400V 3A 3Pin TO-39
|
||
IRFF330
|
Intersil | 功能相似 |
场效应管, MOSFET, N沟道, 400V, 3A TO-205AF
|
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