Technical parameters/dissipated power: 25 W
Technical parameters/rise time: 35 ns
Technical parameters/descent time: 35 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/Encapsulation: TO-205-3
External dimensions/packaging: TO-205-3
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6800
|
TT Electronics Resistors | 功能相似 |
N沟道MOSFET N-CHANNEL MOSFET
|
|||
2N6800
|
Microchip | 功能相似 | TO-205-3 |
N沟道MOSFET N-CHANNEL MOSFET
|
||
2N6800
|
Infineon | 功能相似 | TO-205 |
N沟道MOSFET N-CHANNEL MOSFET
|
||
IRFF330
|
Intersil | 类似代替 |
场效应管, MOSFET, N沟道, 400V, 3A TO-205AF
|
|||
|
|
Microsemi | 完全替代 | TO-205 |
Trans MOSFET N-CH 400V 3A 3-Pin TO-39
|
||
JANTXV2N6800
|
Infineon | 完全替代 | TO-205 |
Trans MOSFET N-CH 400V 3A 3-Pin TO-39
|
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