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Description Trans MOSFET N-CH 600V 3A 3Pin(2+Tab) DPAK
Product QR code
Packaging TO-252-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
9.34  yuan 9.34yuan
10+:
$ 11.2080
100+:
$ 10.6476
500+:
$ 10.2740
1000+:
$ 10.2553
2000+:
$ 10.1806
5000+:
$ 10.0872
7500+:
$ 10.0125
10000+:
$ 9.9751
Quantity
10+
100+
500+
1000+
2000+
Price
$11.2080
$10.6476
$10.2740
$10.2553
$10.1806
Price $ 11.2080 $ 10.6476 $ 10.2740 $ 10.2553 $ 10.1806
Start batch production 10+ 100+ 500+ 1000+ 2000+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(7513) Minimum order quantity(10)
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Technical parameters/rated voltage (DC): 600 V

Technical parameters/rated current: 3.00 A

Technical parameters/dissipated power: 70W (Tc)

Technical parameters/threshold voltage: 5.5 V

Technical parameters/input capacitance: 411 pF

Technical parameters/gate charge: 9.80 nC

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/Continuous drain current (Ids): 3.00 A

Technical parameters/rise time: 25 ns

Technical parameters/Input capacitance (Ciss): 411pF @25V(Vds)

Technical parameters/rated power (Max): 70 W

Technical parameters/descent time: 22 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 70W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/packaging: TO-252-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IXTP3N60P IXTP3N60P IXYS Semiconductor 类似代替 TO-220-3
IXYS SEMICONDUCTOR IXTP3N60P 功率场效应管, MOSFET, N沟道, 3 A, 600 V, 2.9 ohm, 10 V, 5.5 V
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