Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 3.00 A
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 2.9 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 70 W
Technical parameters/threshold voltage: 5.5 V
Technical parameters/input capacitance: 411 pF
Technical parameters/gate charge: 9.80 nC
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 3.00 A
Technical parameters/rise time: 25 ns
Technical parameters/reverse recovery time: 500 ns
Technical parameters/Input capacitance (Ciss): 411pF @25V(Vds)
Technical parameters/descent time: 22 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 70W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Industrial, Industrial, Power Management, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXTY3N60P
|
IXYS Semiconductor | 类似代替 | TO-252-3 |
Trans MOSFET N-CH 600V 3A 3Pin(2+Tab) DPAK
|
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