Technical parameters/dissipated power: 54W (Tc)
Technical parameters/drain source voltage (Vds): 800 V
Technical parameters/Input capacitance (Ciss): 440pF @25V(Vds)
Technical parameters/dissipated power (Max): 54W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXTA2N80
|
IXYS Semiconductor | 类似代替 | TO-263-3 |
TO-263AA N-CH 800V 2A
|
||
IXTY2N80P
|
IXYS Semiconductor | 功能相似 | TO-252-3 |
DPAK N-CH 800V 2A
|
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